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10-30 keV NEGATIVE IONS IMPLANTATION CHAMBER

Implantation conditions:

  • Negative ions: from H‑ to As‑

  • Ions Energy: 10keV - 30keV

  • Implantation area: up to 5x5 cm

  • 5-axis sample positioning system

  • Possibility of in situ observation of sample state during implantation process

Different C ions penetration depth to the hexagonal Boron Nitride (hBN) depending on their energy:

Different H & C ions penetration depth to the hexagonal Boron Nitride (hBN) depending on their energy during implantation:

  • State Research Institute Center for
    Physical Sciences and Technology
  • Public institution
  • Code 302496128
  • VAT code LT100005300110

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