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- ION BEAM TECHNOLOGY
- ION IMPLANTATION
- 300–5000 keV POSITIVE ION IMPLANTATION CHAMBER
300–5000 keV POSITIVE ION IMPLANTATION CHAMBER
Implantation conditions:
- Positive ions: from H+ to As+
- Ions Energy from: 700 keV to 2 MeV (5MeV)
- Implantation depth: from 0,5 to 60 um (depending on the ion type & their energy)
- Min size of implanted area: ~2*4mm (could be smaller with beam aperture)
- Max size of implanted area: up to 5x5 cm
- Beam scanning system for uniform implantation
- 3-axis sample positioning system
- possibility to mount sample on the cryostat finger
- possibility of in situ observation of the sample state during implantation process
- possibility to perform additional in situ measurements of sample properties (luminescence, microwave probed photoconductivity etc.)
Top sample mounting:
Bottom sample mounting:
(E. Šermukšnis, J. Jorudas, A. Šimukovič, V. Kovalevskij, I. Kašalynas. Self-Heating of Annealed Ti/Al/Ni/Au Contacts to Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures. Appl. Sci. 2022, 12(21), 11079. https://doi.org/10.3390/app122111079)