Equipment, Software and Methods

Nonlinear Dynamics and Nanophysics Laboratory
The analysis of nonlinear dynamics, quantum and kinetic problems are performed by means of various approximate analytical (a method of separation of fast and slow motions, averaging method, phase reduction method, etc.) as well as numerical (algorithms of numerical integration of differential equations, Monte Carlo method, etc.) methods
Fluctuation research laboratory
Nanosecond gated microwave X-band/Ka band modulation-type radiometric setup for measurement of hot-electron fluctuations at microwave frequencies. On-wafer measurements at room temperature are conducted using coaxial probe station. Waveguide probing can be used instead at a liquid nitrogen temperature. Fluctuations are measured only during the short pulse and that enables the research of kinetic processes in semiconductors. Voltage pulse duration ranges from 10 nanoseconds to 15 microseconds. Electric fields can exceed 100 kV/cm. Joule heating becomes unimportant because of short pulses.
Capacitance-voltage (50 kilohertz – 30 megahertz) and voltage-current measurement system available. It can be used for electron gas profile estimation in the 2DEG transistor channels as well as finding of 2DEG density.
Agilent–Süss–Maury spectrometer for transistor on wafer measurements of microwave response and noise spectra and microwave power at frequencies from 0.1 to 50 GHz. The main direction – SiGe heterobipolar transistors and GaN heterostructure field effect transistors.
Nanosecond voltage-pulse setup (pulse duration 0.2...100 ns) is used for hot-electron drift velocity measurements in electric field range up to 300 kV/cm. Channel self-heating effects are minimized.
Electro-magnet (2 Tesla)
Monte Carlo and other codes are available for numerical simulation of hot-electron fluctuations in semiconductor heterostructures and transistors.