Equipment

Laboratory of Ultrafast optoelectronics

Tunable wavelength femtosecond duration pulsed optical parametric generator (ORPHEUS, Light Conversion);
Ti:sapphire femtosecond laser (MIRA, Coherent);
Ti:sapphire femtosecond laser (Femtolaser);
Yb:KGW femtosecond laser oscillator (Light Conversion);
Er:fiber femtosecond laser (Toptica);
THz time-domain spectroscopy system;
Optical pump – THz probe system.

Optoelectronic Technology Laboratory

Veeco GENxplor molecular beam epitaxy system is designed for the epitaxial growth of high quality III-V semiconductor compounds with very high deposition control accuracy on substrates up to 3’’ in diameter. The system is equipped with In, Ga, Al, Bi metallic sources, As, Sb crackers and Si, Be and Te for doping.
SVT “III-V MBE System Model C-V-2“ for the growth of III-V semiconducting layers and quantum structures. The device is equipped with In, Ga, Al, Bi metallic sources, As bulk and cracker and Si and Be for doping.
Integrated Vacuum Deposition System Model TFDS- 870 – intended for metal contacts deposition. Presently is possible to deposit Au, Ge, Ti, Ni, Al, AuGe one or multilayer contacts.

Semiconductor Optics Laboratory

Modulation spectroscopy setup (photo- and electroreflectance, SPV, l‑modulation; spectral range 0.5 – 4 eV).
Low-temperature optical spectroscopy setup (photo- and electroreflectance, PL, PLE, l‑modulation; spectral range 0.56 – 5 eV, temperature range 4 – 300 K).
Spectroscopic ellipsometry setup (RC2 Woolam and RAE ellipsometers; spectral range 0.4 – 6.2 eV).
Setup of polarization modulation and magnetooptics (PEM, B ~ 3 T).
FTIR spectroscopy setup (Vertex 70v FT, spectral range 0.01 – 0.7 eV).
Light scattering setup (1.5 – 4 eV).
Shimadzu UV-3600 spectrophotometer with integrating sphere.

Terahertz photonics laboratory

Edinburgh Instruments THz laser FIRL-100;
VDI frequency multiplier chains for 100/200/300/600 GHz;
Thermo Scientific Fourier transform infrared spectrometer Nicolet 8700;
Custom‐designed vacuum Fourier transform infrared spectrometer;
Toptica Terascan 780 system;
Custom‐designed Spectroscopic THz imaging system;
Janis Research closed cycle LHe cryostat with optical windows and electrical connectors;
Custom‐designed LN2 cryostat with optical windows and electrical connectors;
Probes station and laboratory equipment for I/V and C/V measurements under low- and high-voltage bias in dc-, ac-, and pulse regime.