HICONEX 834 NEGATIVE ION SOURCE

Hiconex 834 can be used now not only as a source of ions for further acceleration in Tandetron 4110A ion accelerator, but also as a stand-alone source providing various types of ions at energies from 10keV to 30keV for the implantation in the Low Energy ions implantation chamber.

The cesium sputtering Hiconex 834 heavy ion source produces microampere-intensity negative ion beams from a wide variety of elemental materials and complex compounds. With modifications, it can also generate negative ions from gases such as H₂ and N₂.

Ion beams are produced by sputtering atoms from the surface of a cone-shaped target using a cesium beam. These atoms acquire electrons through charge exchange in a Cs-coated surface layer, forming negative ions. The ions are extracted from the target cone and accelerated to ground potential, reaching energies up to 30 keV.

The geometry of the target cone is optimized to maximize ion yield while minimizing beam emittance. In addition to serving as an injector for the Tandemtron 4110A, the Hiconex 834 can operate as a standalone ion source, delivering ions in the 10–30 keV energy range for low-energy implantation applications.