ION BEAM TECHNOLOGY

The interaction of high-energy ion beams with matter is a unique physical process. Using a beam of accelerated particles, it is possible not only to selectively modify various materials, but also to perform characterization of the composition of materials, including microstructures. The accelerated ions range in a material depends on their energy, so it is possible to control the parameters of the modified structure and, if necessary, implant individual isotopes of elements.

Equipment:

1. Tandetron 4110A ion accelerator

Tandetron 4110A ion accelerator is a Tandem type common analytic instrument used for ion implantation, ion backscattering, PIXE (particle induced x-ray emission) and other analytical techniques.

The negative ions of the required element are selected using an injection magnet, then focused and directed to the acceleration system with a constant voltage generator, which can operate at up to 1 MV. The acceleration system consists of a voltage divider, corona rings, a gas stripper terminal, focusing elements, and a 1 MV power supply. In the acceleration system, negative ions are accelerated (up to 1 MV) using the positive potential of the voltage terminal. The voltage terminal contains a gas ion charge exchange cell, where negative ions lose electrons and are converted into positive ions. The positive particles are then pushed towards the grounded output of the acceleration system by the positive 1 MV potential. The energy of the accelerated ions at the output depends on the ion charge state and can reach up to 2.0 MeV for singly ionized particles and up to 5.0 MeV for quadruply ionized particles.

2. Hiconex 834 negative ion source

Hiconex 834 is a heavy ion source producing microampere intensity negative ion beams from a wide variety of elemental materials as well as complex compounds. It is used not only as a injection source for the Tandetron 4110A ion accelerator, but also as a stand-alone source providing various types of ions at energies from 10keV to 30keV for the ion implantation.

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