Date and time: 2023-11-29 13:30
Location: FTMC room D401, Saulėtekio al. 3
DEFECTS, DOPING AND DIFFUSION IN WIDE-BANDGAP SEMICONDUCTORS
Lasse Vines (Centre for Materials Science and Nanotechnology, University of Oslo, Norway)
The semiconductor's electrical and optical traits hinge significantly on the interplay between defects and dopants. At the University of Oslo's semiconductor physics group, we pursue applied fundamental research to comprehend and manipulate these effects crucial for solar cells, power electronics, sensors, and quantum tech. This presentation offers a glimpse into our work, focusing on wide-bandgap semiconductors like gallium oxide. We will explore electrically active defects in Ga2O3, discussing their identification through experimental and theoretical density functional theory calculations. Additionally, we will cover dopant diffusion and the impact of local Fermi levels on vacancy formation energy, concluding with insights on ion-induced polymorph conversion, rendering materials highly radiation-tolerant.
POINT DEFECTS IN SEMICONDUCTORS FOR QUANTUM TECHNOLOGIES
Marianne E. Bathen (Centre for Materials Science and Nanotechnology, University of Oslo, Norway)
The emerging second quantum revolution aims to harness isolated quantum systems for transformative quantum technologies (QT) like nanoscale sensing, quantum computing, and secure communication. While current platforms rely on superconductors at millikelvin temperatures, the quest for alternative quantum materials is fervent. Semiconductor quantum dots and point defects like the NV centers in diamond and single photon emitters in silicon carbide and silicon offer room-temperature operation and promising platforms for QT, igniting global research interest. This presentation will cover semiconductor point defects for QT, exploring material selection and applications. Then, we will overview ongoing University of Oslo research on defect-based quantum emitters.