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Low Contact Resistance Device and Method of Production

Low Contact Resistance Device and Method of Production

Patent: EP 3840050 B1
Authors: Steponas Ašmontas, Jonas Gradauskas, Konstantinas Leinartas, Laurynas Staišiūnas, Algirdas Sužiedėlis, Aldis Šilėnas

Description: The invention relates to semiconductor devices with low contact resistance between titanium dioxide (TiO₂) and p-type semiconductors using niobium-doped tunnel junctions formed during ALD deposition.

State Research Institute Center for
Physical Sciences and Technology
Public institution
Code 302496128
VAT code LT100005300110

Savanorių st. 231, LT-02300 Vilnius
+370 645 15550
info@ftmc.lt

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