Head of the Laboratory: Dr Vaidas Pačebutas
Phone +370 653 09138
Research objectives
The Laboratory aims to develop molecular beam epitaxy technologies and create advanced optoelectronic devices, while deepening fundamental knowledge of semiconductor physics and charge carrier dynamics. It is also focused on the search for new technological processes to create efficient terahertz, infrared and other photonic components. It is actively looking for new areas of application of THz spectroscopy.
Main research areas:
1. Bismide and A3B5 compound layer technologies
Growth conditions of GaAsBi, InGaAsBi, InAsBi and other compounds are studied, their physical properties important for optoelectronic devices are optimized.
2. Analysis of the physical properties of semiconductors and technological processes
Comprehensive studies are carried out to determine the relationship between technological parameters and final material properties, methods are developed to describe and optimize technological processes.
3. Development and optimization of optoelectronic devices
Terahertz emitters and detectors, single charge transfer diodes, IR range LEDs and detectors, interband and quantum cascade lasers are developed.
4. Research on fast charge carrier dynamics and THz pulses
Charge carrier dynamics is studied using terahertz radiation excitation spectroscopy and optical excitation - terahertz probing methods, and the necessary optoelectronic components are designed.
5. Quantum well and laser structure engineering
Optimizing quantum well structures (InGaAs/GaAs, GaAsBi/AlGaAs, InAs/AlAsSb, InGaAs/AlAsSb), improving emission homogeneity, reducing defect density, improving the active area of lasers for biomedical sensors, high-power laser diodes and other application areas.
6. Quantum technologies
Development of single and entangled photon sources, their integration into photonic integrated circuits and application in quantum communication systems.