- Patent: EP3840050B1
- Authors: Steponas Ašmontas, Jonas Gradauskas, Konstantinas Leinartas, Laurynas Staišiūnas, Algirdas Sužiedėlis, Aldis Šilėnas
Description: The invention relates to semiconductor devices requiring low contact resistance between titanium dioxide (TiO₂) and p-type semiconductors. The method forms a tunnel junction by niobium doping during atomic layer deposition, reducing technological complexity and contact resistivity.