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Method For Fabrication Of Recessed Electrical Elements

  • Patent: EP3975224B1
  • Authors: Irmantas Kašalynas, Simonas Indrišiūnas, Pawel Prystawko, Piotr Kruszewski

Description: The invention relates to fabrication of recessed electrical contacts for wide-bandgap group III nitride semiconductor components using ultrashort pulsed laser microprocessing in controlled atmospheres. The method enables precise formation of recessed electrical elements in semiconductor heterostructures.

  • State Research Institute Center for
    Physical Sciences and Technology
  • Public institution
  • Code 302496128
  • VAT code LT100005300110

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