Method for Selective Metallisation of Inorganic Dielectrics or Semiconductors

  • Patent: US 012336114 B2
  • Authors: Karolis Ratautas, Gediminas Račiukaitis, Aldona Jagminienė, Ina Stankevičienė, Eugenijus Norkus

Description: This invention describes a process for selectively depositing metal on the surfaces of inorganic dielectric materials, such as glass, ceramics, or semiconductor materials. The method enables the rapid and precise formation of electric circuits on both flat and three-dimensional surfaces.