Investigation of Hot Carrier Dynamics in A3B5 Semiconductor NanoStructures

Our studies show that photoresponse across a semiconductor p-n junction exposed to intense radiation can simultaneously consist of three different components having different dynamic characteristics. The components are due to charge generation and heating phenomena.
Influence of each component on the total signal depends on the wavelength of radiation, semiconductor material, junction (not necessarily the p-n) parameters such as thickness of the layers forming it, degree of doping and profile, and the temperature of the sample.
Having determined their regularities, dynamic coefficients of the components and conditions to distinguish and separate each component, we will open up a wide range of opportunities for the application of results, for example, in photovoltaics, what is particularly relevant at present as increase of solar cell efficiency.
For more information, please contact the theme supervisor J. Gradauskas.