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Manufacturing and development of semiconductor devices

Lasers, LEDs, Diodes, Transistors and all other modern electronic components are designed and manufactured under one roof! From mirrors for complex laser systems to the next generation of gas detectors and spectrophotometers. The FTMC's semiconductor device manufacturing and development line enables component delivery and end device prototyping.
 

Services provided 

Rent of clean rooms. The facilities available comply with ISO5 (50 m2) and ISO7 (352 m2) clean room requirements. Layout of the premises 

Two molecular beam epitaxy (MBE) machines capable of producing III-V material group structures on up to 3'' wafers.

Complete production and prototyping line for optoelectronic devices and semiconductor lasers.

Production of Quantum Cascade Lasers (QCL), wavelength upon request:
  • InGaAsBi on InP;
  • GaAs / GaAsBi on GaAs;
  • GaAs / AlGaAs on GaAs etc.
Production of quantum structures, wavelength on request (from 760 nm up to 20 µm):
  • InGaAs / AlAsSb on InP (strain balanced);
  • InGaAs / AlInAs is InP (lattice matched and strain balanced);
  • InGaAs / InGaAs is InP (strain balanced);
  • InAs / AlSb is InAs (nearly lattice matched);
  • InAs / Al (As) Sb is InAs (lattice matched).
Deposition of thin films
  • Magnetron sputtering system;
  • Electron beam system (E-Beam);
  • PECVD system for SiNx, SiO2, Al2O3, SiC and graphene growth.
Lithography
  • Laser lithography, with 600 nm resolution;
  • Karl Suss MJB3 Mask Target with 1.5 µm Resolution.
Formation of metal contacts.

Laser diode housing.

 

Equipment

 

Examples of laser systems provided to the market 

List of InAs-based mid-IR Quantum Cascade Lasers developed for gas sensing applications and fabricated at FTMC

Emission wavelength at 300 K

Active Core Material System

Operation mode

Operating voltage

Peak power

Max operation Temp.

2.98 µm

InAs/AlSb

Pulsed

12÷17 V

> 200 mW

310 K

3.33 µm

InAs/AlSb

Pulsed

12÷17 V

> 1 W

405 K

3.98 µm

InAs/AlSb

Pulsed

12÷17 V

> 1 W

410 K

4.3 µm

InAs/AlSb

Pulsed

12÷17 V

> 1 W

400 K

4.39 µm

InAs/AlSb

Pulsed

12÷17 V

> 1 W

400 K

4.698 µm

InAs/AlSb

Pulsed

12÷17 V

> 1 W

420 K

8.8 µm

InAs/AlSb

CW

< 10 V

> 50 mW

n/d

Clean room reservation system

With FTMC, the future is bright and compact!

Contact us by filling out the inquiry form. We will respond within 2 business days.


Karolis Stašys

Innovation Manager / Inovacijų vadybininkas

Tel.: +370 629 85166
El.p.: karolis.stasys@ftmc.lt