- Innovations and Services
Head of department prof., habil. dr. Steponas Ašmontas,
phone +370 5 2627124
But the main value and achievement is experience. The scientists of the Laboratory are excellent experts in:
|Scalar network analyzers produced by Elmika Ltd allow investigating interaction of microwave radiation with semiconductor structures in the frequency range from 10 GHz up to 170 GHz.|
Agilent Semiconductor Parameter Analyzer and LCR meter are used for I-V and C-V measurements of semiconductor structures.
|Agilent Spectrum Analyzer is used to investigate electromagnetic radiation of 20 kHz ÷ 325 GHz frequency range generated by semiconductor structures.|
|Karl Suess and Cascade Microtech probe stations are used for measurements of semiconductor electric parameters in DC regime and at high frequencies of 26÷40 GHz and 75÷110 GHz ranges.|
|Original near field microwave microscope produced in collaboration with Elmika Ltd is used to investigate electrical properties of materials having various electrical conductivity values, from dielectrics up to metals. The microscope operates in millimeter wavelengths of electromagnetic radiation.|
|Low temperature photoluminescence setup with two photon counting systems. It is possible to register a continuous flow and optical pulses of picosecond duration at low 200-900 nm light intensity in the temperature range 4-300 K with 0.008 nm spectral resolution (or 0.003 nm resolution up to 750 nm wavelength): a) time correlated single photon counting module allows to measure photoluminescence decay, photon correlation and time resolved luminescence spectra in the range from 10 ps up to 2 µs; b) gated photon counter allows to measure photoluminescence spectra and their decay over 250 ns.|
|Liquid phase epitaxy equipment is used to fabricate various semiconductor structures serving as a base of microwave , infrared and x-ray radiation sensors as well as solar cells developed in the Department of Electronics.|
|Microelectronics technological facility is used for fabrication of experimental semiconductor electronic devices at small extent.|
|Dektak 6M stylus profilometer for sample surface topography measurements in the nano scale. It allows to measure vertical dimensions of the surface with few nanometer accuracy.|
|Optical parametric oscillator (λ=1.4÷4.2 µm), optically pumped by Nd:YAG laser radiation (λ=1.06 µm, pulse duration ~10 ns (Ekspla Ltd)|
|Tuned wavelength CO2 laser (λ=9.2÷10.8 µm). Power in CW regime 20-40 W. Pulse power 2-5 kW at pulse duration ~150 ns (Edinburgh Instruments Ltd).|
|Optically pumped far-infrared laser of tunable wavelength, operating in CW and pulsed regime and emitting over 50 discrete lines of λ ~ 50 - 700 μm (respectfully, ƒ ~ 6 – 0,4 THz) spectrum range (Edinburgh Instruments Ltd.).|
Project "Development of novel solar cell forming technology using thin graded‐gap porous Si structures with embedded plasmic metal nanoparticles and electrostatically charged ferroelectric layer" financed by the Research Council of Lithuania within Lithuanian‐Ukrainian program; led by S. Ašmontas, contract No. TAP LU‐5‐2016, duration 2016 – 2017. Porous silicon layer containing nanometric structures will be formed by means of electrochemical etching and intense laser light. Graded forbidden energy gap is typical for such nano structures; this way it will extend the range of usefully absorbed light and thereby the unwanted effects of hot electrons reducing solar cell efficiency will be weakened. Also, to increase the absorption of sunlight, plasmic metal nanoparticles will be embedded in the surface of porous silicon.
The project „New broadband sensors of elektromagnetic radiation on the on the base of 2DEG“ in the frame of Scientific Programme of Lithuanian Science Council „Towards Future Technologies“ is implemented in 2016-2018. The implementation of the LTDEP project will: 1) put light on the electromagnetic radiation detection mechanism in the asymmetrical field‐transistor‐like structure with the partial gate over the two‐dimensional electron channel; 2) on the base of these structures, give impulse to develop high‐sensitivity sensor; 3) extend the detectable radiation range up to the X‐ray region.