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Department of Optoelectronics

Head of department prof. Gintaras Valušis
phone +370 5 2649211

Department is active in both fundamental and applied research in the fields of semiconducting materials physics and technology, optoelectronic device technology and applications. Modern epitaxial growth equipment available at the Department allows us to produce semiconductor structures from novel materials such as group III bismides, and fabricate from these structures optoelectronic components for infrared and terahertz spectral ranges. Researchers of the Department have complex experimental facilities for optical characterization of different materials; they have developed numerous unique terahertz spectroscopy and imaging techniques.
Laboratories:


Equipment

Laboratory of Ultrafast optoelectronics

 
  • Tunable wavelength femtosecond duration pulsed optical parametric generator (ORPHEUS, Light Conversion);
  • Ti:sapphire femtosecond laser (MIRA, Coherent);
  • Ti:sapphire femtosecond laser (Femtolaser);
  • Yb:KGW femtosecond laser oscillator (Light Conversion);
  • Er:fiber femtosecond laser (Toptica);
  • THz time-domain spectroscopy system;
  • Optical pump – THz probe system.
 
Optoelectronic Technology Laboratory  
  • Veeco GENxplor molecular beam epitaxy system is designed for the epitaxial growth of high quality III-V semiconductor compounds with very high deposition control accuracy on substrates up to 3’’ in diameter. The system is equipped with In, Ga, Al, Bi metallic sources, As, Sb crackers and Si, Be and Te for doping.
  • SVT “III-V MBE System Model C-V-2“  for the growth of III-V semiconducting layers and quantum structures. The device is equipped with In, Ga, Al, Bi metallic sources, As bulk and cracker and Si and Be for doping.
  • Integrated Vacuum Deposition System Model TFDS- 870 – intended for metal contacts deposition. Presently is possible to deposit Au, Ge, Ti, Ni, Al, AuGe one or multilayer contacts.
 
Semiconductor Optics Laboratory  
  • Modulation spectroscopy setup (photo- and electroreflectance, SPV, l‑modulation; spectral range  0.5 – 4 eV).
  • Low-temperature optical spectroscopy setup (photo- and electroreflectance, PL, PLE, l‑modulation; spectral range 0.56 – 5 eV, temperature range 4 – 300 K).
  • Spectroscopic ellipsometry setup (RC2 Woolam and RAE ellipsometers; spectral range 0.4 – 6.2 eV).
  • Setup of polarization modulation and magnetooptics (PEM, B ~ 3 T).
  • FTIR spectroscopy setup (Vertex 70v FT, spectral range 0.01 – 0.7 eV).
  • Light scattering setup  (1.5 – 4 eV).
  • Shimadzu UV-3600 spectrophotometer with integrating sphere.
 
Terahertz photonics laboratory  
  • Edinburgh Instruments THz laser FIRL-100;
  • VDI frequency multiplier chains for 100/200/300/600 GHz;
  • Thermo Scientific Fourier transform infrared spectrometer Nicolet 8700;
  • Custom‐designed vacuum Fourier transform infrared spectrometer;
  • Toptica Terascan 780 system;
  • Custom‐designed Spectroscopic THz imaging system;
  • Janis Research closed cycle LHe cryostat with optical windows and electrical connectors;
  • Custom‐designed LN2 cryostat with optical windows and electrical connectors;
  • Probes station and laboratory equipment for I/V and C/V measurements under low- and high-voltage bias in dc-, ac-, and pulse regime.
 
projects
  • European Space Agency (ESA) project „Bismides for InfraRed photoDetector applications“(BIRD)
    The project is focused on the development of technology of novel semiconductor compounds – dilute bismides. Strong influence of Bi atoms incorporated into various A3B5 (GaAs, GaInAs, and InAs) semiconductors on their electronic band structure enables growth of bismides on different substrates materials (GaAs, InP, and GaSb) with much narrower bandgaps photosensitive at near- and mid-infrared wavelengths. The main objectives of the project are to verify the suitability of optimized bulk bismide layers technologies for two applications: i) as a materials with ~1 eV energy bandgap for highly efficient multijunction (3J or 4J) photovoltaic solar cells, and ii) as substrates for photodiodes and focal-plane-arrays sensitive at infrared wavelengths up to 4 mm.
    Project duration 2016 01 18-2018 01 17
    The Prime Contractor is State Research Institute Center for Physical Sciences and Technology (FTMC)
    The project budget is 199 135 EURo

  • FP7 Marie Curie ITN project NOTEDEV (Novel terahertz devices)
    NOTEDEV (Novel Type of Terahertz Devices) is a Marie Curie Initial Training Network that aims to tackle the terahertz gap. A consortium of leading European Universities and industrial partners are collaborating to conduct research and to train young physicists and device engineers in this field. Terahertz sources and detectors have powerful potential for applications in biology, medicine, security and non-destructive testing. Some devices are currently in operation, but to benefit from the full potential of Terahertz frequencies there is an urgent need for developments in efficient, cheap, reliable, scalable and portable THz devices. In the Center for Physical Sciences and Technology, development of semiconducting THz components for Time-Domain Spectroscopy (TDS) systems activated by 1.55 μm femtosecond (fs) laser pulses is in progress.  These fs lasers would ensure a cost-effective and compact THz-TDS system.
    Project duration 2014 10 01-2017 09 30
    The Prime Contractor is Durham university, FTMC group leader is A. Krotkus
    The project budget is 185 000 EUR

  • Nonpolar ZnO thin films: Growth-related structural and optical properties (Mutual Funds Taiwan – Latvia – Lithuania, 2014-2016)
  • Project LAT-04/2016 (3500-P330) „Compact integrated THz components and spectroscopic THz imaging systems – KITKAS“, LAT-04/2016 (Research Council of Lithuania, 2016-2018). Coordinator – Irmantas Kašalynas

  • Project MIP-71/2015 „Bismuth quantum dots in GaAs matrix – BiNano“, (Research Council of Lithuania, 2015-2017).  Coordinator – Renata Butkutė (Dalius Seliuta)

  • Project MIP-14281 „Active metamaterial investigation and application for terahertz switching and modulation“ (Research Council of Lithuania, 2014 – 2017) Coordinator – Žilvinas Kancleris (Dalius Seliuta). 

Most important publications
  1. Adamov, Roman B.; Pashnev, Daniil; Shalygin, Vadim A.; Moldavskaya, Maria D.; Vinnichenko, Maxim Ya; Janonis, Vytautas; Jorudas, Justinas; Tumėnas, Saulius; Prystawko, Paweł; Krysko, Marcin; Sakowicz, Maciej; Kašalynas, Irmantas.  Optical performance of two dimensional electron Gas and GaN:С buffer layers in AlGaN/AlN/GaN heterostructures on SiC substrate. Applied sciences. eISSN 2076-3417. 2021, vol. 11, iss. 13, art. no. 6053, p. 1-14.

  2. Karaliūnas, Mindaugas; Dudutienė, Evelina; Čerškus, Aurimas; Pagalys, Justas; Pūkienė, Simona; Udal, Andres; Butkutė, Renata; Valušis, Gintaras. High precision parabolic quantum wells grown using pulsed analog alloy grading technique: Photoluminescence probing and fractional-dimensional space approach. Journal of luminescence.  ISSN 0022-2313. 2021, vol. 239, art.no. 118321, p. 1-7.
  3. Tumėnas, Saulius; Mackonis, Paulius; Nedzinskas, Ramūnas; Trinkler, Laima; Berzina, Baiba; Korsaks, Valdis; Chang, Liuwen; Chou, Mitch Ming Chi.  Optical properties of lithium gallium oxide. Applied surface science. ISSN 0169-4332. 2017, vol. 421, pt B, p. 837-842. 
  4. Auksorius, Egidijus. Fourier-domain full-field optical coherence tomography with real-time axial imaging. Optics letters. ISSN 0146-9592. 2021, vol. 46, no. 18, p. 4478-4481.
  5. Devenson, Jan; Norkus, Ričardas; Juškėnas, Remigijus; Krotkus, Arūnas. Terahertz emission from ultrathin bismuth layers. Optics letters. ISSN 0146-9592. 2021, vol. 46, no. 15, p. 3681-3684.
  6. Klimas, Vaclovas; Bittencourt, Carla; Valušis, Gintaras; Jagminas, Arūnas. Calcination effects of 2D molybdenum disulfides. Materials characterization. ISSN 1044-5803. 2021, vol. 179, art. n. 111351, p. 1-9.
  7. Paddubskaya, Alesia; Valynets, Nadzeya; Maksimenko, Sergey; Kumar, Mukesh; Baah, Marian; Pekkarinen, Markku; Svirko, Yuri; Valušis, Gintaras; Kuzhir, Polina. Terahertz absorber with graphene enhanced polymer hemispheres array. Nanomaterials. ISSN 2079-4991.  2021, vol. 11, iss. 10, art. no. 2494, p. 1-8.
  8. Janonis, Vytautas; Balagula, Roman; Grigelionis, Ignas; Prystawko, Pawel; Kašalynas, Irmantas. Spatial coherence of hybrid surface plasmon-phonon-polaritons in shallow n-GaN surface-relief gratings. Optics express. ISSN 1094-4087. 2021, vol. 29, iss. 9, p. 13839-13851.
  9. Ščajev, Patrik; Soriūtė, Vaiva; Kreiza, Gediminas; Nargelas, Saulius; Dobrovolskas, Darius; Malinauskas, Tadas; Subačius, Liudvikas; Onufrijevs, Pavels; Varnagiris, Šarūnas; Cheng, Hung-Hsiang. Temperature and spatial dependence of carrier lifetime and luminescence intensity in Ge0.95Sn0.05 layer. Materials science and engineering B. ISSN 0921-5107. 2021, vol. 270, art. no. 115204, p. 1-12.
  10. Qi, Liang; Minkevičius, Linas; Urbanovič, Andžej; Švigelj, Andrej; Grigelionis, Ignas; Kašalynas, Irmantas; Trontelj, Janez; Valušis, Gintaras. Antenna-coupled titanium microbolometers: application for precise control of radiation patterns in terahertz time-domain systems. Sensors. ISSN 1424-8220. 2021, vol. 21, iss. 10, art. no. 3510, p. 1-11.
  11. Valušis, Gintaras; Lisauskas, Alvydas; Yuan, Hui; Knap, Wojciech; G. Roskos, Hartmut. Roadmap of terahertz imaging 2021. Sensors. ISSN 1424-8220. 2021, vol. 21, iss. 12, art. no. 4092, p. 1-52.
  12. Malevich, Vitaly Leonidovich; Ziaziulia, Pavel Aliaksandravich ; Norkus, Ričardas; Pačebutas, Vaidas; Nevinskas, Ignas; Krotkus, Arūnas. Terahertz pulse emission from semiconductor heterostructures caused by ballistic photocurrents. Sensors. ISSN 1424-8220. 2021, vol. 21, iss. 12, art. no. 4067, p. 1-11.
  13. Nevinskas, Ignas; Mockus, Zenius; Juškėnas, Remigijus; Norkus, Ričardas; Selskis, Algirdas; Norkus, Eugenijus; Krotkus, Arūnas. Terahertz photoconductivity spectra of electrodeposited Thin Bi films. Materials. ISSN 1996-1944. 2021, vol. 14, iss. 12, art. no. 3150, p. 1-9.
  14. Nevinskas, Ignas; Norkus, Ričardas; Geižutis, Andrejus; Kulyuk, L.; Miku, A.; Sushkevich, K.; Krotkus, Arūnas. Terahertz pulse emission from photoexcited bulk crystals of transition metal dichalcogenides. Journal of physics D: Applied physics. ISSN 0022-3727. 2021, vol. 54, iss. 11, art. no. 115105, p. 1-7.
  15. Siemion, Agnieszka; Minkevičius, Linas; Qi, Liang; Valušis, Gintaras. Spatial filtering based terahertz imaging of low absorbing objects. Optics and lasers in engineering. ISSN 0143-8166. 2021, vol. 139, art. no. 106476, p. 1-8.
  16. Auksorius, Egidijus; Borycki, Dawid; Wojtkowski, Maciej. Multimode fiber enables control of spatial coherence in Fourier-domain full-field optical coherence tomography for in vivo corneal imaging. Optics letters. ISSN 0146-9592. 2021, vol. 46, no. 6, p. 1413-1416.
  17. Ščajev, Patrik; Onufrijevs, Pavels; Mekys, Algirdas; Malinauskas, Tadas; Augulis, Dominykas; Subačius, Liudvikas; Lee, Kuo-Chih; Kaupuzs, Jevgenijs; Varnagiris, Šarūnas; Medvids, Arturs; Cheng, Hung Hsiang. Extension of spectral sensitivity of GeSn IR photodiode after laser annealing. Applied surface science. ISSN 0169-4332. 2021, vol. 555, art. no. 149711, p. 1-8.
  18. Indrišiūnas, Simonas; Svirplys, Evaldas; Jorudas, Justinas; Kašalynas, Irmantas. Laser processing of transparent wafers with a AlGaN/GaN heterostructures and high-electron mobility devices on a backside. Micromachines. ISSN 2072-666X. 2021, vol. 12, iss. 4, art. no. 407, p. 1-12.
  19. Ksenevich, Vitaly; Dorosinets, Vladimir; Adamchuk, Dmitry; Macutkevič, Jan; Banys, Jūras. Weak localization in polycrystalline tin dioxide films. Materials. ISSN 1996-1944. 2020, vol. 13, iss. 23, art. no. 5415, p. 1-14.
  20. Meisak, Darya; Macutkevič, Jan; Plyushch, Artyom; Polina, Kuzhir; Selskis, Algirdas; Banys, Jūras. Dielectric relaxation in hybrid epoxy/MWCNT/MnFe2O4 composites. Polymers. eISSN 2073-4360. 2020, vol. 12, iss. 3, art. no. 697, p. 1-13.
  21. Jorudas, Justinas; Šimukovič, Artūr; Dub, Maksym; Sakowicz, Maciej; Prystawko, Paweł; Indrišiūnas, Simonas; Kovalevskij, Vitalij; Rumyantsev, Sergey; Knap, Wojciech; Kašalynas, Irmantas. AlGaN/GaN on SiC devices without a GaN buffer layer: electrical and noise characteristics. Micromachines. ISSN 2072-666X. 2020, vol. 11, iss. 12, art. no. 1131, p. 1-13.
  22. Nevinskas, Ignas; Norkus, Ričardas; Geižutis, Andrejus; Kulyuk, L.; Miku, A.; Sushkevich, K.; Krotkus, Arūnas. Terahertz pulse emission from photoexcited bulk crystals of transition metal dichalcogenides. Journal of physics D: Applied physics. ISSN 0022-3727. 2021, vol. 54, iss. 11, art. no. 115105, p. 1-7.
  23. Siemion, Agnieszka; Minkevičius, Linas; Qi, Liang; Valušis, Gintaras. Spatial filtering based terahertz imaging of low absorbing objects. Optics and lasers in engineering. ISSN 0143-8166. 2021, vol. 139, art. no. 106476, p. 1-8.
  24. Agafonov, Vladimir; Nargelienė, Viktorija; Balakauskas, Saulius; Bukauskas, Virginijus; Kamarauskas, Mindaugas; Lukša, Algimantas; Mironas, Audružis; Rėza, Alfonsas; Šetkus, Arūnas. Single variable defined technology control of the optical properties in MoS2 films with controlled number of 2D-layers. Nanotechnology. ISSN 0957-4484. 2020, vol. 31, iss. 2, art. no. 025602, p. 1-12.
  25. Šlekas, Gediminas; Kancleris, Žilvinas Andrius; Urbanovič, Andžej; Čiegis, Raimondas. Comparison of full-wave models of terahertz photoconductive antenna based on ordinary differential equation and Monte Carlo method. European physical journal plus. ISSN 2190-5444. 2020, vol. 135, art. no. 85, p. 1-16.
  26. Drabavičius, Audrius; Naujokaitis, Arnas; Stalnionis, Giedrius; Giraitis, Raimondas; Mockus, Zenius; Kanapeckaitė, Stasė; Kalinauskas, Putinas; Nedzinskas, Ramūnas; Niaura, Gediminas; Juškėnas, Remigijus. Photoelectrochemical, Raman spectroscopy, XRD and photoluminescence study of disorder in electrochemically deposited kesterite thin film. Journal of alloys and compounds. ISSN 0925-8388. 2020, vol. 824, art. no. 153853, p. 1-9.
  27. Grigelionis, Ignas; Kašalynas, Irmantas. Terahertz spectroscopy of thermal radiation from AlGaN/GaN heterostructure on sapphire at low temperatures. Applied sciences. eISSN 2076-3417. 2020, vol. 10, iss. 3, art. no. 851, p. 1-7.
  28. Paulauskas, Tadas; Pačebutas, Vaidas; Geižutis, Andrejus; Stanionytė, Sandra;Dudutienė, Evelina; Skapas, Martynas; Naujokaitis, Arnas; Strazdienė, Viktorija; Čechavičius, Bronislovas; Čaplovičová, Mária; Vretenár, Viliam; Jakieła, Rafał; Krotkus, Arūnas. GaAs1-xBix growth on Ge: anti-phase domains, ordering, and exciton localization. Scientific reports. eISSN 2045-2322. 2020, vol. 10, art. no. 2002, p. 1-12.
  29. Tumėnas, Saulius; Ragaliauskas, Tadas; Penkauskas, Tadas; Valanciute, Audrone; Ambrulevičius, Filipas; Valinčius, Gintaras. Solvent effects on composition and structure of thiolipid molecular anchors for tethering phospholipid bilayers. Applied surface science.ISSN 0169-4332. 2020, vol. 509, art. no. 145268, p. 1-9.
  30. Adomavičius, Ramūnas; Nevinskas, Ignas; Treu, J.; Xu, X.; Koblmüller, G.; Krotkus, Arūnas. Pulsed THz emission from wurtzite phase catalyst-free InAs nanowires. Journal of physics D: Applied physics. ISSN 0022-3727. 2020, vol. 53, iss. 19, art. no. 19LT01, p. 1-8.
  31. Janonis, Vytautas; Tumėnas, Saulius; Prystawko, Pawel; Kacperski, Jacek; Kašalynas, Irmantas. Investigation of n-type gallium nitride grating for applications in coherent thermal sources. Applied Physics Letters. ISSN 0003-6951. 2020, vol. 116, iss. 11, art. no. 112103, p. 1-5.
  32. Bertašius, Povilas; Macutkevič, Jan; Banys, Jūras; Gaidukovs, Sergejs; Barkane, Anda; Vaivodiss, Romans. Synergy effects in dielectric and thermal properties of layered EVA composites with carbon and Fe3O4 nanoparticles. Journal of applied polymer science. ISSN 0021-8995. 2020, vol. 137, iss. 24, art. no. 48814, p. 1-8.
  33. Seliuta, Dalius; Vyšniauskas, Juozas; Ikamas, Kęstutis; Lisauskas, Alvydas; Kašalynas, Irmantas; Reklaitis, Antanas; Valušis, Gintaras. Symmetric bow-tie diode for terahertz detection based on transverse hot-carrier transport. Journal of Physics D: Applied Physics. ISSN 0022-3727. 2020, vol. 53, iss. 27, art. no. 275106, p. 1-7.
  34. Minkevičius, Linas; Qi, Liang; Siemion, Agnieszka; Jokubauskis, Domas; Sešek, Aleksander; Švigelj, Andrej; Trontelj, Janez; Seliuta, Dalius; Kašalynas, Irmantas; Valušis, Gintaras. Titanium-based microbolometers: control of spatial profile of terahertz emission in weak power sources. Applied sciences. eISSN 2076-3417. 2020, vol. 10, iss. 10, art. no 3400, p. 1-12.
  35. Paulauskas, Tadas; Pačebutas, Vaidas; Butkutė, Renata; Čechavičius, Bronislovas; Naujokaitis, Arnas; Kamarauskas, Mindaugas; Skapas, Martynas; Devenson, Jan; Čaplovičová, Mária; Vretenár, Viliam; Li, Xiaoyan; Kociak, Mathieu; Krotkus, Arūnas. Atomic-resolution EDX, HAADF, and EELS study of GaAs1-xBix alloys. Nanoscale Research Letters. ISSN 1931-7573. 2020, vol. 15, art. no. 121, p. 1-12.
  36. Pačebutas, Vaidas; Norkus, Ričardas; Karpus, Vytautas; Geižutis, Andrejus; Strazdienė, Viktorija; Stanionytė, Sandra; Krotkus, Arūnas. Band-offsets of GaInAsBi–InP heterojunctions. Infrared physics & technology. ISSN 1350-4495. 2020, vol. 109, art. no. 103400, p. 1-4.
  37. Grivickas, P.; Ščajev, Patrik; Kazuchits, N.; Mazanik, A.; Korolik, O.; Voss, L. F.; Conway, A. M.; Hall, D. L.; Bora, M.; Subačius, Liudvikas; Bikbajevas, Vitalijus; Grivickas, Vytautas. Carrier recombination parameters in diamond after surface boron implantation and annealing. Journal of applied physics. ISSN 0021-8979. 2020, vol. 127, iss. 24, art. no. 245707, p. 1-6.
  38. Kamarauskas, Mindaugas; Agafonov, Vladimir; Daugalas, Tomas; Balakauskas, Saulius; Mironas, Audružis; Nedzinskas, Ramūnas; Niaura, Gediminas; Treideris, Marius; Šetkus, Arūnas. Photovoltaic effect-driven IR response of heterojunctions obtained by direct CVD synthesis of MoS2 nanolayers on crystalline silicon. Nanotechnology. ISSN 0957-4484. 2020, vol. 31, iss. 42, art. no. 425603, p. 1-12.
  39. Pashnev, Daniil; Kaplas, Tommi Sakari; Korotyeyev, Vadym; Janonis, Vytautas; Urbanovič, Andžej; Jorudas, Justinas; Kašalynas, Irmantas. Terahertz time-domain spectroscopy of two-dimensional plasmons in AlGaN/GaN heterostructures. Applied physics letters. ISSN 0003-6951. 2020, vol. 117, iss. 5, art. no. 051105, p. 1-5.
  40. Pashnev, Daniil; Korotyeyev, Vadym; Jorudas, Justinas; Kaplas, Tommi Sakari; Janonis, Vytautas; Urbanovič, Andžej; Kašalynas, Irmantas. Experimental evidence of temperature dependent effective mass in AlGaN/GaN heterostructures observed via THz spectroscopy of 2D plasmons. Applied physics letters. ISSN 0003-6951. 2020, vol. 117, iss. 16, art. no. 162101, p. 1-5.
  41. Baah, Marian; Obraztsov, Petr; Paddubskaya, Alesia; Bičiūnas, Andrius; Suvanto, Sari; Svirko, Yuri; Kuzhir, Polina; Kaplas, Tommi Sakari. Electrical, transport, and optical properties of multifunctional graphitic films synthesized on dielectric surfaces by nickel nanolayer-assisted pyrolysis. ACS applied materials & interfaces. ISSN 1944-8244. 2020, vol. 12, iss. 5, p. 6226-6233.
  42. Pačebutas, Vaidas; Čechavičius, Bronislovas; Krotkus, Arūnas. Single quantum well diodes from GaInAsBi emitting at wavelengths up to 2.5 μm. Infrared physics & technology. ISSN 1350-4495. 2020, vol. 111, art. no. 103567, p. 1-5.
  43. Paulauskas, Tadas; Čechavičius, Bronislovas; Karpus, Vytautas; Jočionis, Lukas; Tumėnas, Saulius; Devenson, Jan; Pačebutas, Vaidas; Stanionytė, Sandra; Strazdienė, Viktorija; Geižutis, Andrejus; Čaplovičová, Mária; Vretenár, Viliam; Walls, Michael; Krotkus, Arūnas. Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys. Journal of applied physics. ISSN 0021-8979.2020, vol. 128, iss. 19, art. no. 195106, p. 1-10.
  44. Norkus, Ričardas; Nevinskas, Ignas; Krotkus, Arūnas. Terahertz emission from a bulk GaSe crystal excited by above bandgap photons. Journal of applied physics. ISSN 0021-8979. 2020, vol. 128, iss. 22, art. no. 225701, p. 1-6.
  45. Korotieiev, Vadym; Kochelap, V. A. Plasma wave oscillations in a nonequilibrium two-dimensional electron gas: Electric field induced plasmon instability in the terahertz frequency range. Physical review B. ISSN 2469-9950. 2020, vol. 101, iss. 23, art. no 235420, p. 1-15.
  46. Seliuta, Dalius; Šlekas, Gediminas; Valušis, Gintaras; Kancleris, Žilvinas Andrius. Fano resonance arising due to direct interaction of plasmonic and lattice modes in a mirrored array of split ring resonators. Optics letters. ISSN 0146-9592. 2019, vol. 44, iss. 4, p. 759-762.
  47. Grigelionis, Ignas; Jorudas, Justinas; Jakštas, Vytautas; Janonis, Vytautas; Kašalynas, Irmantas; Prystawko, Pawel; Kruszewski, Piotr; Leszczyński, Michal. Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at 20 K and 110 K temperature. Materials science in semiconductor processing. ISSN 1369-8001. 2019, vol. 93, p. 280-283.
  48. Paulauskas, Tadas; Klie, Robert F. Decay of high-energy electron bound states in crystals. Ultramicroscopy. ISSN 0304-3991. 2019, vol. 196, p. 99-110.
  49. Paddubskaya, Alesia; Demidenko, Marina; Batrakov, Konstantin; Valušis, Gintaras; Kaplas, Tommi Sakari; Svirko, Yuri; Kuzhir, Polina. Tunable perfect THz absorber based on a stretchable ultrathin carbon-polymer bilayer. Materials. ISSN 1996-1944. 2019, vol. 12, iss. 1, art. no. 143, p. 1-11.
  50. Viter, Roman; Savchuk, Maryna; Starodub, Nickolay; Balevičius, Zigmas; Tumėnas, Saulius; Ramanavičienė, Almira; Jevdokimovs, Daniels; Erts, Donats; Iatsunskyi, Igor; Ramanavičius, Arūnas. Photoluminescence immunosensor based on bovine leukemia virus proteins immobilized on the ZnO nanorods. Sensors and actuators B: Chemical. ISSN 0925-4005. 2019, vol. 285, p. 601-606.
  51. Glemža, Justinas; Palenskis, Vilius; Geižutis, Andrejus; Čechavičius, Bronislovas; Butkutė, Renata; Pralgauskaitė, Sandra; Matukas, Jonas. Low-frequency noise investigation of 1.09 μm GaAsBi laser diodes. Materials. ISSN 1996-1944. 2019, vol. 12, iss. 4, art. no. 673, p. 1-13.
  52. Indrišiūnas, Simonas; Richter, Heiko; Grigelionis, Ignas; Janonis, Vytautas; Minkevičius, Linas; Valušis, Gintaras; Račiukaitis, Gediminas; Hagelschuer, Till; Hübers, Heinz-Wilhelm; Kašalynas, Irmantas. Laser-processed diffractive lenses for the frequency range of 4.7 THz. Optics letters. ISSN 0146-9592. 2019, vol. 44, no. 5, p. 1210-1213.
  53. Ščajev, Patrik; Miasojedovas, Saulius; Subačius, Liudvikas; Jarašiūnas, Kęstutis; Mazanik, Alexander V.; Korolik, Olga V.; Kato, Masashi. Impact of intrinsic defects on excitation dependent carrier lifetime in thick 4H-SiC studied by complementing microwave photoconductivity, freecarrier absorption and time-resolved photoluminescence techniques. Journal of luminescence. ISSN 0022-2313. 2019, vol. 212, p. 92-98.
  54. Pačebutas, Vaidas; Stanionytė, Sandra; Norkus, Ričardas; Bičiūnas, Andrius; Urbanovič, Andžej; Krotkus, Arūnas. Terahertz pulse emission from GaInAsBi. Journal of applied physics. ISSN 0021-8979. 2019, vol. 125, iss. 17, art. no. 174507, p. 1-5.
  55. Norkus, Ričardas; Aleksiejūnas, Ramūnas; Kadys, Arūnas; Kolenda, Marek; Tamulaitis, Gintautas; Krotkus, Arūnas. Spectral dependence of THz emission from InN and InGaN layers. Scientific reports. eISSN 2045-2322. 2019, vol. 9, art. no. 7077, p. 1-6.
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